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SSM3K7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K7002FU
High Speed Switching Applications Analog Switch Applications
* * Small package Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V)
0.65 0.65 1.3 0.1 2.0 0.2 2.1 0.1 1.25 0.1 +0.1 0.3 - 0
Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 20 200 800 150 150 -55~150 Unit V V
1 2 3
Channel temperature Storage temperature range
C C
1. GATE
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.6mm x 3)
0.6 mm 1.0 mm
Note:
USM JEDEC JEITA TOSHIBA
2. SOURCE 3. DRAIN
SC-70 2-2E1E
Marking
3
Equivalent Circuit (top view)
3
NC
1 2 1 2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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0~0.1
Drain power dissipation (Ta = 25C)
mW
0.7
mA
0.9 0.1
+0.1 0.15 -0.05
SSM3K7002FU
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 20 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 0.25 mA VDS = 10 V, ID = 200 mA ID = 500 mA, VGS = 10 V Drain-Source ON resistance RDS (ON) ID = 100 mA, VGS = 5 V ID = 100 mA, VGS = 4.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on delay time Turn-off delay time Ciss Crss Coss td(on) td(off) VDD = 30V, ID = 200 mA, VGS = 0 ~ 10V VDS = 25 V, VGS = 0, f = 1 MHz Min 60 1.0 170 Typ 2.0 2.1 2.2 17 1.4 5.8 2.4 26 Max 10 1 2.5 3.0 3.2 3.3 pF pF pF ns Unit A V A V mS

4.0 40
Switching Time Test Circuit
(a) Test circuit
10V 0 IN 50 0V RL VDD
OUT
(b) VIN
10 V
90% 10%
10 s VDD = 30 V Duty < 1% = VIN: tr, tf < 2 ns (Zout = 50 ) Common Source Ta = 25C
(c) VOUT
VDD
10% 90% tr td(on) td(off) tf
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 250 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device.
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SSM3K7002FU
ID - VDS 1000 900 800 Drain current ID (mA) 700 600 500 400 300 200 100 0 0 0.5 1 1.5 2 Drain-Source voltage VDS (V) Common Source Ta=25C 7 10 3.3 3.0 2.7 2.5 VGS=2.3V 5 4.5 4.0
ID - VGS
1000
Common Source VDS=10V
100
Drain current ID (mA) Ta=100C
10 1 0.1 0.01
0 1 2 3 4 5 Gate-Source voltage VGS (V) 25C -25C
RDS(ON) - ID 5 Drain-Source on resistance RDS(ON) () Common Source Ta=25C Drain-Source on resistance RDS(ON) ()
RDS(ON) - VGS 5 Common Source ID=100mA Ta=100C 25C 2 -25C
4
4
3 VGS=4.5V 2
5.0V
3
10V 1
1
0 10 100 Drain current ID (mA) 1000
0 0 2 4 6 8 Gate-Source voltage VGS (V) 10
RDS(ON) - Ta 5 Drain-Source on resistance RDS(ON) () Common Source 4 VGS=4.5V,ID=100mA 3 10V,500mA 5.0V,100mA 1 Gate threshold voltage Vth(V) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 Ambient temperature Ta (C) 150 0 -25 0
Vth - Ta Common Source ID=0.25mA VDS=10V
2
25 50 75 100 125 Ambient temperature Ta (C)
150
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SSM3K7002FU
|Yfs| - ID 1000 Drain reverse current IDR (mA) 1000 900 800 700 600 500 400 300 200 100 0 10 100 Drain current ID (mA) 1000 0
S G D
IDR - VDS Common Source VGS=0V Ta=25C
Forward transfer admittance |Yfs| (mS)
100
IDR
Common source VDS=10V Ta=25C 10
-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Drain-Source voltage VDS (V)
C - VDS 100 Common Source VGS=0V f=1MHz Ta=25C 10000
t - ID Common Source VDD=30V VGS=0~10V Ta=25C
10 Coss
Ciss
Switching time t (ns)
Capacitance C (pF)
1000
tf
100 td(off) 10 td(on) 1 tr
Crss 1 0.1 1 10 Drain-Source voltage VDS (V) 100
1
10 100 Drain current ID (mA)
1000
PD - Ta 250 Drain power dissipation PD (mW) mounted on FR4 board 25.4mmx25.4mmx1.6t Cu Pad0.6mm2x3
200
150
100
50
0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
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SSM3K7002FU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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